Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires.
نویسندگان
چکیده
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.
منابع مشابه
Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K
Systematic excitation power and temperature-dependent measurements on the emission lines of single self-assembled InP/(Al0.20Ga0.80)0.51In0.49P quantum dots embedded in micropillars have been performed. The quantum dots were excited optically via a pulsed laser and their luminescence was collected using a micro-photoluminescence setup. The exciton and biexciton intensity, linewidth, and spectra...
متن کاملOptical study of GaN nanowires and GaN/AlN microcavities
This work focuses on the optical study of GaN nanowires and AlN microcavities containingGaN quantum dots. The 1-meV linewidth of the neutral donor-bound exciton line in thephotoluminescence spectrum of MBE-grown GaN nanowires evidences that the strain ishomogeneous in the material. These nanowires do not exhibit any excitonic confinement, butthe efficient strain relaxation allow...
متن کاملSingle photons from single CdSe quantum dot embedded in ZnSe nanowire
We report the growth of ZnSe nanowires and nanoneedles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn–Se flux ratio. By employing a combined MBE growth of nanowires and nanoneedles without any postprocessing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electro...
متن کاملOptical Properties of Wurtzite GaN and ZnO Quantum Dots
We have investigated exciton states in wurtzite GaN/AlN and ZnO quantum dots. A strong piezoelectric field in GaN/AlN quantum dots is found to tilt conduction and valence bands, thus pushing the electron to the top and the hole to the bottom of the GaN/AlN quantum dot. As a result, the exciton ground state energy in GaN/AlN quantum dots with heights larger than 3 nm exhibits a red shift with re...
متن کاملExcitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite ~WZ! and zinc-blende ~ZB! crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conductionand valence-band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it h...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Nano letters
دوره 8 7 شماره
صفحات -
تاریخ انتشار 2008